Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 158
... containing diluted semimagnetic superlattices and quantum wells [ 69 , 70 ] has spurred further investigations of ... contain a much higher density of lattice imperfections than do Si and GaAs . The latter are now invariably used as ...
... containing diluted semimagnetic superlattices and quantum wells [ 69 , 70 ] has spurred further investigations of ... contain a much higher density of lattice imperfections than do Si and GaAs . The latter are now invariably used as ...
Page 374
... containing metal - to- metal gaskets or sealing surfaces are used where a welded seal is not practical . The valves in the gas panel are generally bellow seal valves with a minimum of dead volume in the bellows around the sealing ...
... containing metal - to- metal gaskets or sealing surfaces are used where a welded seal is not practical . The valves in the gas panel are generally bellow seal valves with a minimum of dead volume in the bellows around the sealing ...
Page 381
... containing compounds . To circumvent this problem , coordinated group III sources have been proposed [ 65–67 ] . The reactivity of the group III species in these compounds is suppressed by forming an intermolecular adduct , —e.g ...
... containing compounds . To circumvent this problem , coordinated group III sources have been proposed [ 65–67 ] . The reactivity of the group III species in these compounds is suppressed by forming an intermolecular adduct , —e.g ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength