Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 64
Page 592
... contamination . This effect has been noted in chambers used to deposit both dielectrics and epitaxial semiconductor films . For example , surface reconstruction of Si following remote hydrogen plasma cleaning was more difficult ...
... contamination . This effect has been noted in chambers used to deposit both dielectrics and epitaxial semiconductor films . For example , surface reconstruction of Si following remote hydrogen plasma cleaning was more difficult ...
Page 665
... contamination of the deposit , with slow deposition processes more prone to contamination than fast ones [ 101 ] . SAP processes with slow deposition rates , such as the ALE of GaAs using metal alkyl sources , mentioned above , are also ...
... contamination of the deposit , with slow deposition processes more prone to contamination than fast ones [ 101 ] . SAP processes with slow deposition rates , such as the ALE of GaAs using metal alkyl sources , mentioned above , are also ...
Page 700
... Contamination and Damage Contamination and damage are two undesired side - effects that one either must learn to live with , or else must minimize , in order to take advantage of the very many unique , useful features plasma - assisted ...
... Contamination and Damage Contamination and damage are two undesired side - effects that one either must learn to live with , or else must minimize , in order to take advantage of the very many unique , useful features plasma - assisted ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength