Thin Film Processes, Volume 2 |
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Page 592
respect to Si and O contamination of Ge surfaces , have been identified between
direct and remote excitation of the hydrogen gas using fused silica plasma
excitation tubes . Direct excitation of hydrogen / helium mixtures leads to erosion
of Si ...
respect to Si and O contamination of Ge surfaces , have been identified between
direct and remote excitation of the hydrogen gas using fused silica plasma
excitation tubes . Direct excitation of hydrogen / helium mixtures leads to erosion
of Si ...
Page 665
Reactions of the decomposition products or residual gases ( particularly oxygen
and water vapor ) in the process chamber with the surface of the growing film can
also lead to contamination of the deposit , with slow deposition processes more ...
Reactions of the decomposition products or residual gases ( particularly oxygen
and water vapor ) in the process chamber with the surface of the growing film can
also lead to contamination of the deposit , with slow deposition processes more ...
Page 700
Contamination and Damage Contamination and damage are two undesired side
- effects that one either must learn to live with , or else must minimize ... Problems
due to deposition of contaminants and radiation damage are intimately related .
Contamination and Damage Contamination and damage are two undesired side
- effects that one either must learn to live with , or else must minimize ... Problems
due to deposition of contaminants and radiation damage are intimately related .
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls