Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 188
... density is the cathode heating current , which controls the rate of electron emission . A wide range of ion current densities can be achieved by leaving the discharge voltage and pressure fixed ( typically 1 mtorr ) and varying the cathode ...
... density is the cathode heating current , which controls the rate of electron emission . A wide range of ion current densities can be achieved by leaving the discharge voltage and pressure fixed ( typically 1 mtorr ) and varying the cathode ...
Page 220
... current density on copper cathodes . The majority of the craters observed were found to be hemispherical in shape . Measurements of a single spot arc , taken for 11 different arc currents in the range of 4.7 A to 105 A , indicated that ...
... current density on copper cathodes . The majority of the craters observed were found to be hemispherical in shape . Measurements of a single spot arc , taken for 11 different arc currents in the range of 4.7 A to 105 A , indicated that ...
Page 224
John L. Vossen, Werner Kern. F. Current Densities The current density of the cathode spot depends upon a range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] ...
John L. Vossen, Werner Kern. F. Current Densities The current density of the cathode spot depends upon a range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength