Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 59
... density is given as nc = mεo ( w / e ) 2 . ( 7.3 ) At a microwave frequency of 2.45 GHz , the critical density is 7 × 1010 cm - 3 Upon the addition of a magnetic field , it becomes possible to propagate a microwave at densities above ...
... density is given as nc = mεo ( w / e ) 2 . ( 7.3 ) At a microwave frequency of 2.45 GHz , the critical density is 7 × 1010 cm - 3 Upon the addition of a magnetic field , it becomes possible to propagate a microwave at densities above ...
Page 220
... density from the measured , most probable crater diam- eters ; a maximum current density was observed that corresponded to an arc current of 50 A. The increasing crater size at higher currents reduced the calculated current density ...
... density from the measured , most probable crater diam- eters ; a maximum current density was observed that corresponded to an arc current of 50 A. The increasing crater size at higher currents reduced the calculated current density ...
Page 224
John L. Vossen, Werner Kern. F. Current Densities The current density of the cathode spot depends upon a range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] ...
John L. Vossen, Werner Kern. F. Current Densities The current density of the cathode spot depends upon a range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength