Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 76
Page 59
For a simple plasma in the absence of a magnetic field , there is a critical
maximum density above which an ... Upon the addition of a magnetic field , it
becomes possible to propagate a microwave at densities above the critical
density .
For a simple plasma in the absence of a magnetic field , there is a critical
maximum density above which an ... Upon the addition of a magnetic field , it
becomes possible to propagate a microwave at densities above the critical
density .
Page 220
Daalder calculated the most probable current density from the measured , most
probable crater diameters ; a maximum current density was observed that
corresponded to an arc current of 50 A . The increasing crater size at higher
currents ...
Daalder calculated the most probable current density from the measured , most
probable crater diameters ; a maximum current density was observed that
corresponded to an arc current of 50 A . The increasing crater size at higher
currents ...
Page 224
F . Current Densities The current density of the cathode spot depends upon a
range of parameters including the cathode material , the type of cathode spot ,
and the current growth rate . Mitterauer [ 40 ] found the current densities quoted
by ...
F . Current Densities The current density of the cathode spot depends upon a
range of parameters including the cathode material , the type of cathode spot ,
and the current growth rate . Mitterauer [ 40 ] found the current densities quoted
by ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls