Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 395
... dependent flows arise [ 177 , 178 ] . The formation of a transverse roll ( also described as a return flow ) at the ... dependent , three - dimensional flows in the form of a “ snaking " motion of the longitudinal rolls for low Reynolds ...
... dependent flows arise [ 177 , 178 ] . The formation of a transverse roll ( also described as a return flow ) at the ... dependent , three - dimensional flows in the form of a “ snaking " motion of the longitudinal rolls for low Reynolds ...
Page 639
... dependent distribu- tion using a Kirchoff transformation [ 286 ] . For semiconductors such as Si and GaAs , K decreases with tempera- ture , and temperature - dependent calculations yield significantly higher temperatures than those ...
... dependent distribu- tion using a Kirchoff transformation [ 286 ] . For semiconductors such as Si and GaAs , K decreases with tempera- ture , and temperature - dependent calculations yield significantly higher temperatures than those ...
Page 656
... dependent in the usual manner , and thus in a laser thermal CVD process will be spatially and temporally dependent as well . Thermal decomposition of SiH4 has been modeled by a Monte Carlo approach [ 70 ] , showing the importance of ...
... dependent in the usual manner , and thus in a laser thermal CVD process will be spatially and temporally dependent as well . Thermal decomposition of SiH4 has been modeled by a Monte Carlo approach [ 70 ] , showing the importance of ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength