Thin Film Processes, Volume 2 |
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Page 639
ture distribution can be converted to the temperature - dependent distribution
using a Kirchoff transformation [ 28b ) . For semiconductors such as Si and GaAs ,
K decreases with temperature , and temperature - dependent calculations yield ...
ture distribution can be converted to the temperature - dependent distribution
using a Kirchoff transformation [ 28b ) . For semiconductors such as Si and GaAs ,
K decreases with temperature , and temperature - dependent calculations yield ...
Page 656
The rates of diffusion , desorption , and cluster decomposition are all temperature
dependent in the usual manner , and thus in a laser thermal CVD process will be
spatially and temporally dependent as well . Thermal decomposition of SiH4 ...
The rates of diffusion , desorption , and cluster decomposition are all temperature
dependent in the usual manner , and thus in a laser thermal CVD process will be
spatially and temporally dependent as well . Thermal decomposition of SiH4 ...
Page 810
For photochemical processes , which are linearly dependent on the total number
of photons and do not require a significant local increase in temperature , cw
sources are preferable to pulsed sources , since higher rates can be achieved
with ...
For photochemical processes , which are linearly dependent on the total number
of photons and do not require a significant local increase in temperature , cw
sources are preferable to pulsed sources , since higher rates can be achieved
with ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls