Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 256
John L. Vossen, Werner Kern. observed deposition rate , in the absence of a magnetic field , was a strong function of the source - to - substrate distance ( tripling the distance reduced the rate by 66 % ) . The deposition rate increased ...
John L. Vossen, Werner Kern. observed deposition rate , in the absence of a magnetic field , was a strong function of the source - to - substrate distance ( tripling the distance reduced the rate by 66 % ) . The deposition rate increased ...
Page 343
John L. Vossen, Werner Kern. LPCVD reactors . Deposition rates of 1.2 μm / min have been reported ( 5 sccm WF6 , 6 ... rate occurs at 300 ° C [ 479 ] . Other workers have reported a linear increase of the film deposition rate with in ...
John L. Vossen, Werner Kern. LPCVD reactors . Deposition rates of 1.2 μm / min have been reported ( 5 sccm WF6 , 6 ... rate occurs at 300 ° C [ 479 ] . Other workers have reported a linear increase of the film deposition rate with in ...
Page 648
... rate can be expressed as Rate = j στο σNo + v / j 悲( -Y ) ( 3.5 ) where No is the surface concentration of adsorbed ... deposition rate and yield are shown in Fig . 13 as a function of the ratio of reagent and beam fluxes , for a number ...
... rate can be expressed as Rate = j στο σNo + v / j 悲( -Y ) ( 3.5 ) where No is the surface concentration of adsorbed ... deposition rate and yield are shown in Fig . 13 as a function of the ratio of reagent and beam fluxes , for a number ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength