Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 76
... developed , combin- ing aspects of existing plasma technology , which can lead to enhanced plasma processing rates . The understanding of plasmas used for plasma processing is far from complete . Models are still being proposed and ...
... developed , combin- ing aspects of existing plasma technology , which can lead to enhanced plasma processing rates . The understanding of plasmas used for plasma processing is far from complete . Models are still being proposed and ...
Page 127
... developed by Bunshah et al . [ 76a ] for the synthesis of cubic boron nitride involves boric acid as a reactant , which can be easily evaporated from a resistance - heated tungsten boat . In addition to the ease of evaporation , this ...
... developed by Bunshah et al . [ 76a ] for the synthesis of cubic boron nitride involves boric acid as a reactant , which can be easily evaporated from a resistance - heated tungsten boat . In addition to the ease of evaporation , this ...
Page 843
... developed for GaAs may work with only slight modification for other III - V materials . 5. II - VI Semiconductors Cadmium telluride has been etched with cw visible light by a photosub- limation mechanism that is believed to combine both ...
... developed for GaAs may work with only slight modification for other III - V materials . 5. II - VI Semiconductors Cadmium telluride has been etched with cw visible light by a photosub- limation mechanism that is believed to combine both ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength