Thin Film Processes, Volume 2 |
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Page 127
A process developed by Bunshah et al . [ 76a ) for the ... Moreover , this novel
approach may contribute to further development in reactive MBE processes and
other vapor deposition processes involving organometallic compound reactants .
A process developed by Bunshah et al . [ 76a ) for the ... Moreover , this novel
approach may contribute to further development in reactive MBE processes and
other vapor deposition processes involving organometallic compound reactants .
Page 169
TRENDS AND FUTURE DEVELOPMENT In this chapter we have reviewed the
key aspects of the MBE technology . ... Although initially MBE was developed as
a research tool for the III – V semiconductors , the technique has been applied for
...
TRENDS AND FUTURE DEVELOPMENT In this chapter we have reviewed the
key aspects of the MBE technology . ... Although initially MBE was developed as
a research tool for the III – V semiconductors , the technique has been applied for
...
Page 203
Automation becomes more important , if not crucial , as development progresses
from the R & D stage to production . There are many ... A hollow cathode has
been developed for etching and deposition applications ( 184 ) . The device ...
Automation becomes more important , if not crucial , as development progresses
from the R & D stage to production . There are many ... A hollow cathode has
been developed for etching and deposition applications ( 184 ) . The device ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls