Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 423
... device structures requires the controlled introduction of intentional im- purities . These intentional impurities are typically electrically active as shallow donor or acceptor states . High - speed digital device structures that rely ...
... device structures requires the controlled introduction of intentional im- purities . These intentional impurities are typically electrically active as shallow donor or acceptor states . High - speed digital device structures that rely ...
Page 568
... device structure . These devices displayed improvements in the InP / SiO2 interface quality relative to interfaces formed by direct PECVD depositions , but the improvements were not sufficient for most device applications . Chang et al ...
... device structure . These devices displayed improvements in the InP / SiO2 interface quality relative to interfaces formed by direct PECVD depositions , but the improvements were not sufficient for most device applications . Chang et al ...
Page 613
... device structures [ 48 , 67-71 ] ; and GaAs films have been studied by photoluminescence [ 34 , 35 ] . B. Device Applications The characteristics of the remote PECVD process that are important in device applications include the ...
... device structures [ 48 , 67-71 ] ; and GaAs films have been studied by photoluminescence [ 34 , 35 ] . B. Device Applications The characteristics of the remote PECVD process that are important in device applications include the ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength