Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 150
... diffraction pattern is projected to a phosphor screen on the other side of the sample . Because of the shallow incidence angle , the electrons penetrate only a few atomic layers . The projected pattern is therefore characteristic of the ...
... diffraction pattern is projected to a phosphor screen on the other side of the sample . Because of the shallow incidence angle , the electrons penetrate only a few atomic layers . The projected pattern is therefore characteristic of the ...
Page 151
... diffraction pattern of GaAs 900 4 " Heater 800 700 600 Pyrometer Temperature ( II - 3 . MOLECULAR BEAM EPITAXY 151.
... diffraction pattern of GaAs 900 4 " Heater 800 700 600 Pyrometer Temperature ( II - 3 . MOLECULAR BEAM EPITAXY 151.
Page 795
... diffraction of an incident plane wave from a mask edge . Wavelength 248 nm ... diffraction minima in Fig . 5 [ 57 ] . The etch profile also depends on the thickness ... pattern edge than does a shorter wavelength ( 248 nm ) , the higher ...
... diffraction of an incident plane wave from a mask edge . Wavelength 248 nm ... diffraction minima in Fig . 5 [ 57 ] . The etch profile also depends on the thickness ... pattern edge than does a shorter wavelength ( 248 nm ) , the higher ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength