Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 112
... direct evap- oration , in which the composition of the evaporant is the same as that of the compound that is to be ... direct and reactive processes in somewhat greater detail . 1. Direct Evaporation When a compound is heated ...
... direct evap- oration , in which the composition of the evaporant is the same as that of the compound that is to be ... direct and reactive processes in somewhat greater detail . 1. Direct Evaporation When a compound is heated ...
Page 566
... direct PECVD process . In a conventional direct PECVD process , all of the process gases , reactants as well as any diluents , are subjected to direct plasma excitation , and the substrate for thin film deposition is positioned in the ...
... direct PECVD process . In a conventional direct PECVD process , all of the process gases , reactants as well as any diluents , are subjected to direct plasma excitation , and the substrate for thin film deposition is positioned in the ...
Page 569
... Direct and Remote Plasma - Enhanced CVD Processes The following discussion of enhancement mechanisms for CVD pro ... direct plasma excitation . The ques- tions of which of the source gases are excited , and where they are excited , will ...
... Direct and Remote Plasma - Enhanced CVD Processes The following discussion of enhancement mechanisms for CVD pro ... direct plasma excitation . The ques- tions of which of the source gases are excited , and where they are excited , will ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength