Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 25
... discharge can be much the same as that of the dc discharge . Usually they are two electrodes , of which one may be tied to ground . Some aspects of the rf discharge depend critically on the relative areas of these two electrodes . The ...
... discharge can be much the same as that of the dc discharge . Usually they are two electrodes , of which one may be tied to ground . Some aspects of the rf discharge depend critically on the relative areas of these two electrodes . The ...
Page 64
... discharge , in which electrons were pro- duced as secondaries by ion bombardment of the cathode . The discharge current as a function of voltage in these plasmas has three distinct modes , as shown in Fig . 53. At low voltage ( region I ) ...
... discharge , in which electrons were pro- duced as secondaries by ion bombardment of the cathode . The discharge current as a function of voltage in these plasmas has three distinct modes , as shown in Fig . 53. At low voltage ( region I ) ...
Page 75
... discharge current ( a reasonable assumption ) , then the emission levels of various species can be predicted . For example , emission from the background gas should be proportional to the discharge current to the first power , at least ...
... discharge current ( a reasonable assumption ) , then the emission levels of various species can be predicted . For example , emission from the background gas should be proportional to the discharge current to the first power , at least ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength