Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 22
... discussed earlier . At higher and higher discharge currents , the cathode will heat significantly , either to the point of melting or , if it is constructed of refractory materials , to the point of thermionic electron emission . This ...
... discussed earlier . At higher and higher discharge currents , the cathode will heat significantly , either to the point of melting or , if it is constructed of refractory materials , to the point of thermionic electron emission . This ...
Page 309
... discussed by Ouazzani and Rosenberger [ 200 ] . These authors also show that the wall temperature is critical to predicting transverse film thickness variations . This is further demon- strated in three - dimensional simulations of ...
... discussed by Ouazzani and Rosenberger [ 200 ] . These authors also show that the wall temperature is critical to predicting transverse film thickness variations . This is further demon- strated in three - dimensional simulations of ...
Page 445
... discussed here . Rather , the application of visible or shorter - wavelength radiation to the deposition of films from the gas phase is stressed . Photo - CVD is only one member of an ever - growing class of processes , including those ...
... discussed here . Rather , the application of visible or shorter - wavelength radiation to the deposition of films from the gas phase is stressed . Photo - CVD is only one member of an ever - growing class of processes , including those ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength