Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 77
Page 58
... effect has shown to be the dominant effect in setting the current - voltage relation of the magnetron [ 23 ] . The magnitude of the sputtered atom heating , as well as such aspects as the size and thermal conductivity of the gas atoms ...
... effect has shown to be the dominant effect in setting the current - voltage relation of the magnetron [ 23 ] . The magnitude of the sputtered atom heating , as well as such aspects as the size and thermal conductivity of the gas atoms ...
Page 273
... effects of increasing carbon concen- tration on both brilliance and color . While the addition of carbon has the desirable effect of reducing the green and increasing the red components of the film color , it also has the undesirable effect ...
... effects of increasing carbon concen- tration on both brilliance and color . While the addition of carbon has the desirable effect of reducing the green and increasing the red components of the film color , it also has the undesirable effect ...
Page 423
... effect transistors . Studies of novel physical effects , such as the fractional Hall effect , require high - purity materials for their observation . The utilization of these films in device structures requires the controlled ...
... effect transistors . Studies of novel physical effects , such as the fractional Hall effect , require high - purity materials for their observation . The utilization of these films in device structures requires the controlled ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength