Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 77
Page 302
... effects that decrease in importance with reactor pressure and height . It is often advantageous to rotate the susceptor at high speeds ( > 500 rpm ) to emulate a rotating disk flow , which creates a uniform mass transfer layer ( i.e. ...
... effects that decrease in importance with reactor pressure and height . It is often advantageous to rotate the susceptor at high speeds ( > 500 rpm ) to emulate a rotating disk flow , which creates a uniform mass transfer layer ( i.e. ...
Page 653
... effects of reverse reactions on the surface caused by limited transport of product species away from the reaction zone has also recently been presented [ 66 ] . In the diffusion - limited regime , the effects of buffer gases are also ...
... effects of reverse reactions on the surface caused by limited transport of product species away from the reaction zone has also recently been presented [ 66 ] . In the diffusion - limited regime , the effects of buffer gases are also ...
Page 662
... effect is again uniform if viscosity effects are neglected [ 82 ] . Particle - beam processes are normally operated in low - pressure , slow- growth environments where transport effects similar to those described above do not appear ...
... effect is again uniform if viscosity effects are neglected [ 82 ] . Particle - beam processes are normally operated in low - pressure , slow- growth environments where transport effects similar to those described above do not appear ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength