Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 82
Page 13
... electrons to move in response to a perturbation is on the order of the time it takes an electron to move a Debye length . This time is just the Debye length ( Eq . ( 1.1 ) ) , divided by the electron velocity . It is also likely that the ...
... electrons to move in response to a perturbation is on the order of the time it takes an electron to move a Debye length . This time is just the Debye length ( Eq . ( 1.1 ) ) , divided by the electron velocity . It is also likely that the ...
Page 42
John L. Vossen, Werner Kern. electron temperatures of similar power plasmas of light and heavy species . The large cross - sections at high electron energy would rapidly damp or degrade the higher velocity electrons , resulting in a lower ...
John L. Vossen, Werner Kern. electron temperatures of similar power plasmas of light and heavy species . The large cross - sections at high electron energy would rapidly damp or degrade the higher velocity electrons , resulting in a lower ...
Page 103
... electron - beam - heated work - accelerated sources are shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten ...
... electron - beam - heated work - accelerated sources are shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength