Thin Film Processes, Volume 2 |
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Page 13
The electrons in the plasma , however , do not move instantaneously to
counteract local variations in the charge ... The time it takes the electrons to move
in response to a perturbation is on the order of the time it takes an electron to
move a ...
The electrons in the plasma , however , do not move instantaneously to
counteract local variations in the charge ... The time it takes the electrons to move
in response to a perturbation is on the order of the time it takes an electron to
move a ...
Page 42
electron temperatures of similar power plasmas of light and heavy species . The
large cross - sections at high electron energy would rapidly damp or degrade the
higher velocity electrons , resulting in a lower electron temperature . Indeed , this
...
electron temperatures of similar power plasmas of light and heavy species . The
large cross - sections at high electron energy would rapidly damp or degrade the
higher velocity electrons , resulting in a lower electron temperature . Indeed , this
...
Page 103
the gun filament assembly located in a separate chamber maintained at a lower
pressure , help in alleviating these problems to a certain extent , they cannot be
fully circumvented . Some examples of thermionic electron - beam - heated work
...
the gun filament assembly located in a separate chamber maintained at a lower
pressure , help in alleviating these problems to a certain extent , they cannot be
fully circumvented . Some examples of thermionic electron - beam - heated work
...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |