Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 28
... energy ( half the peak - to- peak voltage ) , while the walls of the chamber and the grounded counter- electrode are bombarded at very low energy . In this case , there is a net removal of material from the powered electrode by ...
... energy ( half the peak - to- peak voltage ) , while the walls of the chamber and the grounded counter- electrode are bombarded at very low energy . In this case , there is a net removal of material from the powered electrode by ...
Page 645
... energy on the lateral extent of scattering , suggesting that low - energy beams offer the most potential for ultimate resolution . Below about 3 keV , scattering effects are expected to have a minimal impact on feature size . The ...
... energy on the lateral extent of scattering , suggesting that low - energy beams offer the most potential for ultimate resolution . Below about 3 keV , scattering effects are expected to have a minimal impact on feature size . The ...
Page 761
... energy to obtain a measure of the energy efficiency of the material removal . The peak in Fig . 2b is in the 200-400 eV range . This means that , for the same target heating , the etch rate will be higher at 200-400 eV than it will be ...
... energy to obtain a measure of the energy efficiency of the material removal . The peak in Fig . 2b is in the 200-400 eV range . This means that , for the same target heating , the etch rate will be higher at 200-400 eV than it will be ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength