Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 761
John L. Vossen, Werner Kern. yield . The etch rates in Tables I - IV are all for normal - incidence ions . Some ion ... rate is proportional to sputter yield , so that the variation of etch rate for a constant ion current density would ...
John L. Vossen, Werner Kern. yield . The etch rates in Tables I - IV are all for normal - incidence ions . Some ion ... rate is proportional to sputter yield , so that the variation of etch rate for a constant ion current density would ...
Page 768
... etching , or RIBE ) , or it can be introduced at the target ( chemically assisted ion - beam etching , or CAIBE ) . A. Etch Selectivity Chemical reactions can be used both to increase and to decrease the etch rate , permitting the etching ...
... etching , or RIBE ) , or it can be introduced at the target ( chemically assisted ion - beam etching , or CAIBE ) . A. Etch Selectivity Chemical reactions can be used both to increase and to decrease the etch rate , permitting the etching ...
Page 841
... rate [ 134 , 135 , 239–241 ] , but can also etch GaAs at low laser power densities that produce negligible temperature increases [ 76 , 140 , 242 , 243 ] . Photoluminescence intensities from these laser - etched surfaces can be higher ...
... rate [ 134 , 135 , 239–241 ] , but can also etch GaAs at low laser power densities that produce negligible temperature increases [ 76 , 140 , 242 , 243 ] . Photoluminescence intensities from these laser - etched surfaces can be higher ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength