Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 784
... etchants have been developed to etch thin films . Most , however , will etch the entire film surface unless ... etchant sources , including liquids and both low- and high - pressure gases . In contrast , ion- and electron - based ...
... etchants have been developed to etch thin films . Most , however , will etch the entire film surface unless ... etchant sources , including liquids and both low- and high - pressure gases . In contrast , ion- and electron - based ...
Page 791
... etchants , the illuminated and unilluminated regions of the semiconductor surface serve as an anode and a cathode for a galvanic reaction . Material selectivity is determined by both the chemical selectivity of the particular etching ...
... etchants , the illuminated and unilluminated regions of the semiconductor surface serve as an anode and a cathode for a galvanic reaction . Material selectivity is determined by both the chemical selectivity of the particular etching ...
Page 825
... etchants can produce surface rip- ples [ 158 ] . This is seen in the etching of GaAs with 530 - nm cw light using 1-100 W / cm2 and an acid / peroxide etching solution . Similar ripple pat- terns have been observed with other ...
... etchants can produce surface rip- ples [ 158 ] . This is seen in the etching of GaAs with 530 - nm cw light using 1-100 W / cm2 and an acid / peroxide etching solution . Similar ripple pat- terns have been observed with other ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength