Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 679
... etching step has to be highly directional or anisotropic . Wet chemical etching usually leads to isotropic etching , i.e. , etching proceeds at the same rate in all ... etching Anisotropic etching b ) V - 1 . PLASMA - ASSISTED ETCHING 679.
... etching step has to be highly directional or anisotropic . Wet chemical etching usually leads to isotropic etching , i.e. , etching proceeds at the same rate in all ... etching Anisotropic etching b ) V - 1 . PLASMA - ASSISTED ETCHING 679.
Page 822
... etching of n - type relative to p - type materials . For example , wet etching of GaAs with 257 - nm light at 10 W / cm2 using acid / peroxide gives an etch rate for 1018 / cm3 n - GaAs that is 1.5 times higher than that for Cr - doped ...
... etching of n - type relative to p - type materials . For example , wet etching of GaAs with 257 - nm light at 10 W / cm2 using acid / peroxide gives an etch rate for 1018 / cm3 n - GaAs that is 1.5 times higher than that for Cr - doped ...
Page 841
... etched surfaces can be higher than those observed with conventional wet etching , indicating no process - induced damage [ 140 ] . These processes often show partial crystallographic etching rates similar to non - laser- enhanced ...
... etched surfaces can be higher than those observed with conventional wet etching , indicating no process - induced damage [ 140 ] . These processes often show partial crystallographic etching rates similar to non - laser- enhanced ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength