Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 791
... etching processes . The first type is photoelectrolytic or photoelec- trochemical ( PEC ) etching . These processes require ohmic contacts to the semiconductor and an external power supply . Etching is controlled by the applied current ...
... etching processes . The first type is photoelectrolytic or photoelec- trochemical ( PEC ) etching . These processes require ohmic contacts to the semiconductor and an external power supply . Etching is controlled by the applied current ...
Page 822
... etching of GaAs0.63P0.37 by using photons with energies intermediate be- tween the bandgap energies of the two materials [ 127 ] . Selective etching based on dopant type has been demonstrated using both wet and dry processes ...
... etching of GaAs0.63P0.37 by using photons with energies intermediate be- tween the bandgap energies of the two materials [ 127 ] . Selective etching based on dopant type has been demonstrated using both wet and dry processes ...
Page 841
John L. Vossen, Werner Kern. pyrolytic etching processes has been studied using SiCl4 , CCl4 , and GeCl4 [ 85 ] . Several gas - phase photochemical processes in which UV excimer lasers are used to generate halogen atoms often have ...
John L. Vossen, Werner Kern. pyrolytic etching processes has been studied using SiCl4 , CCl4 , and GeCl4 [ 85 ] . Several gas - phase photochemical processes in which UV excimer lasers are used to generate halogen atoms often have ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength