Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 107
... evaporation target , which is the anode . It is very similar in concept to the hot hollow cathode device . Cathodic arc evaporation as a means of depositing thin films ... Evaporated constituents TABLE II II - 2 . EVAPORATION PROCESSES 107.
... evaporation target , which is the anode . It is very similar in concept to the hot hollow cathode device . Cathodic arc evaporation as a means of depositing thin films ... Evaporated constituents TABLE II II - 2 . EVAPORATION PROCESSES 107.
Page 112
... evaporation , in which the element or elements of the compound are evaporated and re- act with the gas to form the compound . For example , vaporized Al atoms react with oxygen to form Al , Oy . Plasma - assisted reactive evaporation ...
... evaporation , in which the element or elements of the compound are evaporated and re- act with the gas to form the compound . For example , vaporized Al atoms react with oxygen to form Al , Oy . Plasma - assisted reactive evaporation ...
Page 117
... Evaporation Processes The difficulties involved in direct evaporation processes that are caused by fragmentation of the vaporized compounds are overcome in reactive evaporation , where a metal is evaporated in the presence of the ...
... Evaporation Processes The difficulties involved in direct evaporation processes that are caused by fragmentation of the vaporized compounds are overcome in reactive evaporation , where a metal is evaporated in the presence of the ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength