Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 200
... example , Al plugs can be inserted into a Ti plate for the fabrication of Ti - Al - N dielectrics . As another example , rare - earth chips have been placed on a transition - metal to fabricate magne- to - optical disks [ 167 ] . Two ...
... example , Al plugs can be inserted into a Ti plate for the fabrication of Ti - Al - N dielectrics . As another example , rare - earth chips have been placed on a transition - metal to fabricate magne- to - optical disks [ 167 ] . Two ...
Page 762
... example , while target temperature and background pressure have little effect on physical sputtering , they can have major effects on reactive sputtering . As an additional complication , the chemical reactions in reactive sput- tering ...
... example , while target temperature and background pressure have little effect on physical sputtering , they can have major effects on reactive sputtering . As an additional complication , the chemical reactions in reactive sput- tering ...
Page 778
... example of the usefulness of a controllable direction of incidence is the varied incidence to minimize redeposition and trenching in Sec- tion IV , B. Another example is etching inclined slots for introducing air in a controlled manner ...
... example of the usefulness of a controllable direction of incidence is the varied incidence to minimize redeposition and trenching in Sec- tion IV , B. Another example is etching inclined slots for introducing air in a controlled manner ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength