Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 52
Page 566
... as low as 150 – 200°C . This review describes a particular class of PECVD
processes in which the substrate is outside of the plasma generation region , and
not all of the process gases are subjected to direct plasma excitation . This
process ...
... as low as 150 – 200°C . This review describes a particular class of PECVD
processes in which the substrate is outside of the plasma generation region , and
not all of the process gases are subjected to direct plasma excitation . This
process ...
Page 571
2 ) There are at least two variations of the remote PECVD process defined by
which of the process gases is subjected to direct plasma excitation : one in which
only one of the reactant gases , A ( g ) , along with a noble gas diluent , X ( g ) , is
...
2 ) There are at least two variations of the remote PECVD process defined by
which of the process gases is subjected to direct plasma excitation : one in which
only one of the reactant gases , A ( g ) , along with a noble gas diluent , X ( g ) , is
...
Page 592
respect to Si and O contamination of Ge surfaces , have been identified between
direct and remote excitation of the hydrogen gas using fused silica plasma
excitation tubes . Direct excitation of hydrogen / helium mixtures leads to erosion
of Si ...
respect to Si and O contamination of Ge surfaces , have been identified between
direct and remote excitation of the hydrogen gas using fused silica plasma
excitation tubes . Direct excitation of hydrogen / helium mixtures leads to erosion
of Si ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |