Thin Film Processes, Volume 2 |
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Page 159
A valved orifice can be used to fine - adjust the flux [ 79 ] . Hg - containing
compounds have very interesting properties . Hg1 - Cd Te , for instance , has a
bandgap ranging from 0 to 1 . 5 eV at room temperature , depending on the
composition ...
A valved orifice can be used to fine - adjust the flux [ 79 ] . Hg - containing
compounds have very interesting properties . Hg1 - Cd Te , for instance , has a
bandgap ranging from 0 to 1 . 5 eV at room temperature , depending on the
composition ...
Page 297
7 Schmidt 1 - 10 Reynolds Re = { v } momentum flux by convection momentum
flux by diffusion 10 - 1 - 102 Peclet ( thermal ) Pen = Re Pr thermal flux by
convection thermal flux by diffusion 10 - 1 - 102 Peclet ( mass ) Pem = Re Sc
mass flux by ...
7 Schmidt 1 - 10 Reynolds Re = { v } momentum flux by convection momentum
flux by diffusion 10 - 1 - 102 Peclet ( thermal ) Pen = Re Pr thermal flux by
convection thermal flux by diffusion 10 - 1 - 102 Peclet ( mass ) Pem = Re Sc
mass flux by ...
Page 648
V v Rate = j ToNo + vijllj where N , is the surface concentration of adsorbed
precursor molecules , o is the cross - section for transformation of the precursor to
products per photon or particle , j is the radiation flux to the surface , vis the
reagent ...
V v Rate = j ToNo + vijllj where N , is the surface concentration of adsorbed
precursor molecules , o is the cross - section for transformation of the precursor to
products per photon or particle , j is the radiation flux to the surface , vis the
reagent ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls