Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 79
Page 217
... formation Improvement of adhesion Removal of the surface oxide or contaminated layers just before the deposition Mechanical improvement of adhesion Formation of interfacial layer Enhancement of the growth of nuclei at the initial state ...
... formation Improvement of adhesion Removal of the surface oxide or contaminated layers just before the deposition Mechanical improvement of adhesion Formation of interfacial layer Enhancement of the growth of nuclei at the initial state ...
Page 415
... formation of an ordered structure , the chemistry and kinetics of mass motion on the growth surface play an important role in the actual formation of an ordered alloy . The presence of ordering in these material is of both fundamental ...
... formation of an ordered structure , the chemistry and kinetics of mass motion on the growth surface play an important role in the actual formation of an ordered alloy . The presence of ordering in these material is of both fundamental ...
Page 508
... FORMATION In a discussion of the sol - gel process , it is difficult to separate the applications from the processing and characterization . In terms of pro- cessing , the conditions that lead to film formation have been outlined [ 11 ...
... FORMATION In a discussion of the sol - gel process , it is difficult to separate the applications from the processing and characterization . In terms of pro- cessing , the conditions that lead to film formation have been outlined [ 11 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength