Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 75
... function of power . This also points out the problem of trying to measure a deposition rate due simply to the emission level of a species : The emission is a quadratic function of the current , whereas the deposition rate is generally a ...
... function of power . This also points out the problem of trying to measure a deposition rate due simply to the emission level of a species : The emission is a quadratic function of the current , whereas the deposition rate is generally a ...
Page 121
... function [ 49 , 62 ] . In order to control the substrate reactions and thereby modify the film growth , one has to be able to control the electron energy and distribution function independently of the other process parameters . It is in ...
... function [ 49 , 62 ] . In order to control the substrate reactions and thereby modify the film growth , one has to be able to control the electron energy and distribution function independently of the other process parameters . It is in ...
Page 402
... function of the angle about a principal Bragg reflection , e.g. , ( 004 ) . The angular difference between the GaAs substrate peak and the epilayer peak yields composi- tional information . This angular separation is directly related to ...
... function of the angle about a principal Bragg reflection , e.g. , ( 004 ) . The angular difference between the GaAs substrate peak and the epilayer peak yields composi- tional information . This angular separation is directly related to ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength