Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Results 1-3 of 80
Page 192
... flow rate of the reactive gas is varied , while the flow rate of the inert gas , the pumping speed , and the target power are assumed to be held constant . The target coverage changes very little with initial increase in reactive gas flow ...
... flow rate of the reactive gas is varied , while the flow rate of the inert gas , the pumping speed , and the target power are assumed to be held constant . The target coverage changes very little with initial increase in reactive gas flow ...
Page 193
... gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate ... gas [ 115 ] . Because the sputter yield of a reactive compound on a target surface is usually much lower ( e.g. , by a ...
... gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate ... gas [ 115 ] . Because the sputter yield of a reactive compound on a target surface is usually much lower ( e.g. , by a ...
Page 374
... gas used in the bubbler source and the other gas sources are directly metered through the use of mass flow controllers . The bubbler source consists of several valves that can direct the gas flow into or bypassing the bubbler . The ...
... gas used in the bubbler source and the other gas sources are directly metered through the use of mass flow controllers . The bubbler source consists of several valves that can direct the gas flow into or bypassing the bubbler . The ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength