Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 311
... gas - phase nucleated particles . The conveyorized APCVD systems by Watkins - Johnson [ 239 ] are also based on mixing the reactant gases above the substrate , but their refined gas injectors have been more successful in avoiding the ...
... gas - phase nucleated particles . The conveyorized APCVD systems by Watkins - Johnson [ 239 ] are also based on mixing the reactant gases above the substrate , but their refined gas injectors have been more successful in avoiding the ...
Page 312
... gases . Improvements in film thickness uniformity have been obtained with multiple - orifice gas injectors combined with a cross flow liner that has openings above the wafers [ 241 ] , or by use of an optimally designed wafer carrier ...
... gases . Improvements in film thickness uniformity have been obtained with multiple - orifice gas injectors combined with a cross flow liner that has openings above the wafers [ 241 ] , or by use of an optimally designed wafer carrier ...
Page 571
... gases is subjected to direct plasma excitation : one in which only one of the reactant gases , A ( g ) , along with a noble gas diluent , X ( g ) , is plasma excited ; and a second variation in which only a noble gas diluent is plasma ...
... gases is subjected to direct plasma excitation : one in which only one of the reactant gases , A ( g ) , along with a noble gas diluent , X ( g ) , is plasma excited ; and a second variation in which only a noble gas diluent is plasma ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength