Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 527
John L. Vossen, Werner Kern. A. Nonequilibrium Glow Discharges We can define a glow discharge as a partially ionized gas composed of equal volume concentrations of positively and negatively charged species , and different concentrations ...
John L. Vossen, Werner Kern. A. Nonequilibrium Glow Discharges We can define a glow discharge as a partially ionized gas composed of equal volume concentrations of positively and negatively charged species , and different concentrations ...
Page 682
... glow discharges conform to the definition given above , and therefore one can use the terms plasma and glow dis- charge interchangeably in the context of this contribution . A glow discharge is initiated by the release of electrons ...
... glow discharges conform to the definition given above , and therefore one can use the terms plasma and glow dis- charge interchangeably in the context of this contribution . A glow discharge is initiated by the release of electrons ...
Page 685
... Glow Discharges of Molecular Gases The chemical reactions taking place ... discharge produce non- equilibrium steady - state conditions that can ... discharge will be given . Figure 6 [ 22 ] schematically shows the Relative concentration ...
... Glow Discharges of Molecular Gases The chemical reactions taking place ... discharge produce non- equilibrium steady - state conditions that can ... discharge will be given . Figure 6 [ 22 ] schematically shows the Relative concentration ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength