Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 407
... growth is the most studied system and provides a model of OMVPE growth behavior . There are several key features of homoepitaxial growth that can be illustrated by considering GaAs and that are generic to the growth of most binary and ...
... growth is the most studied system and provides a model of OMVPE growth behavior . There are several key features of homoepitaxial growth that can be illustrated by considering GaAs and that are generic to the growth of most binary and ...
Page 416
... growth situations . The growth of III - V semiconductor alloys can be divided into the mixed group III alloys , such as Al Ga1 - As and In , Ga1 - As , and the mixed group V alloys , such as GaAs , P1 - y . The most complicated systems ...
... growth situations . The growth of III - V semiconductor alloys can be divided into the mixed group III alloys , such as Al Ga1 - As and In , Ga1 - As , and the mixed group V alloys , such as GaAs , P1 - y . The most complicated systems ...
Page 434
... Growth 98 , 148 ( 1989 ) . 13. E. Woelk and H. Beneking , J. Crystal Growth 93 , 216 ( 1988 ) . 14. N. Puetz , G. Hillier , and A. J. Springthorpe , J. Electron . Mater . 17 , 381 ( 1988 ) . 15. ( a ) C. A. Wang , H. K. Choi , and M. K. ...
... Growth 98 , 148 ( 1989 ) . 13. E. Woelk and H. Beneking , J. Crystal Growth 93 , 216 ( 1988 ) . 14. N. Puetz , G. Hillier , and A. J. Springthorpe , J. Electron . Mater . 17 , 381 ( 1988 ) . 15. ( a ) C. A. Wang , H. K. Choi , and M. K. ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength