Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 381
... Halogen - containing precursors ( specifically , diethylgallium chloride and diethylaluminum chloride ) have been used for highly selective growth of GaAs and Al ̧Ga1 - ‚ As [ 68–70 ] . In the case of Al Ga1 - As , selective growth was ...
... Halogen - containing precursors ( specifically , diethylgallium chloride and diethylaluminum chloride ) have been used for highly selective growth of GaAs and Al ̧Ga1 - ‚ As [ 68–70 ] . In the case of Al Ga1 - As , selective growth was ...
Page 464
... halogen lamp Fig . 10. Schematic diagram of a photochemical vapor deposition reactor for the growth of CdTe and HgTe epitaxial films . In this arrangement , the optical source is a 1,000 W Hg - Xe arc lamp whose spectrum is modified by ...
... halogen lamp Fig . 10. Schematic diagram of a photochemical vapor deposition reactor for the growth of CdTe and HgTe epitaxial films . In this arrangement , the optical source is a 1,000 W Hg - Xe arc lamp whose spectrum is modified by ...
Page 468
... halogen ion pairs ( i.e. , M - X , where M and X represent metal and halogen atoms , respec- tively ) . In their apparatus ( cf. Fig . 14 ) , the substrates were arranged on a negatively biased plate , and the metal cations produced in ...
... halogen ion pairs ( i.e. , M - X , where M and X represent metal and halogen atoms , respec- tively ) . In their apparatus ( cf. Fig . 14 ) , the substrates were arranged on a negatively biased plate , and the metal cations produced in ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength