Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
From inside the book
Results 1-3 of 84
Page 88
B. Vacuum Pumping System The gas loads in evaporation processes are fairly
high because of outgassing from chamber walls promoted by the heat load from
the evaporation source, substrate heating, etc., particularly for high-deposition- ...
B. Vacuum Pumping System The gas loads in evaporation processes are fairly
high because of outgassing from chamber walls promoted by the heat load from
the evaporation source, substrate heating, etc., particularly for high-deposition- ...
Page 314
Heating is done by an array of water-cooled, high-intensity tungsten-hydrogen
quartz lamps surrounding the susceptor. Heating from the wafer surface toward
the backside to reduce the temperature gradient within the wafer minimizes
crystal ...
Heating is done by an array of water-cooled, high-intensity tungsten-hydrogen
quartz lamps surrounding the susceptor. Heating from the wafer surface toward
the backside to reduce the temperature gradient within the wafer minimizes
crystal ...
Page 777
All extraneous heating of the target is usually less than 10-20% of the heating
generated by the ion beam, and it is seldom worth trying to reduce extraneous
heating by special configurations. In removing the ion-beam heat input, the basic
...
All extraneous heating of the target is usually less than 10-20% of the heating
generated by the ion beam, and it is seldom worth trying to reduce extraneous
heating by special configurations. In removing the ion-beam heat input, the basic
...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactive reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric structure substrate substrate temperature susceptor target techniques Technol thermal thickness thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, John L. Vossen |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin films |
| Export Citation | BiBTeX EndNote RefMan |