Thin Film Processes, Volume 2 |
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Page 88
John L. Vossen, Werner Kern. B . Vacuum Pumping System The gas loads in
evaporation processes are fairly high because of outgassing from chamber walls
promoted by the heat load from the evaporation source , substrate heating , etc .
John L. Vossen, Werner Kern. B . Vacuum Pumping System The gas loads in
evaporation processes are fairly high because of outgassing from chamber walls
promoted by the heat load from the evaporation source , substrate heating , etc .
Page 98
Schematic of the deposition control / monitor circuit used for resistance - heated
source . ... Such a source material would release gases upon heating , thus
causing spattering of the evaporation material , which can be imbedded in the
growing ...
Schematic of the deposition control / monitor circuit used for resistance - heated
source . ... Such a source material would release gases upon heating , thus
causing spattering of the evaporation material , which can be imbedded in the
growing ...
Page 777
All extraneous heating of the target is usually less than 10 – 20 % of the heating
generated by the ion beam , and it is seldom worth trying to reduce extraneous
heating by special configurations . In removing the ion - beam heat input , the
basic ...
All extraneous heating of the target is usually less than 10 – 20 % of the heating
generated by the ion beam , and it is seldom worth trying to reduce extraneous
heating by special configurations . In removing the ion - beam heat input , the
basic ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls