Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 189
... important developments in the area of sputtered metal films , which have occurred since the publication of " Thin Film Processes I , " are listed below . Sputter deposition of compound semiconductors and semiconducting oxides ( e.g. ...
... important developments in the area of sputtered metal films , which have occurred since the publication of " Thin Film Processes I , " are listed below . Sputter deposition of compound semiconductors and semiconducting oxides ( e.g. ...
Page 203
... important to remember that automation control can never substitute for poor process understanding . Automation becomes more important , if not crucial , as development progresses from the R & D stage to production . There are many ...
... important to remember that automation control can never substitute for poor process understanding . Automation becomes more important , if not crucial , as development progresses from the R & D stage to production . There are many ...
Page 730
... important role in pattern transfer by plasma - assisted etching . But the fidelity of a pattern transfer process ( e.g. , how well a particular masking pattern can be transferred into a substrate surface ) is not only dependent on these ...
... important role in pattern transfer by plasma - assisted etching . But the fidelity of a pattern transfer process ( e.g. , how well a particular masking pattern can be transferred into a substrate surface ) is not only dependent on these ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength