Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 192
The target coverage changes very little with initial increase in reactive gas flow
because the bombarding ion flux keeps the eroded portion of the target clear of
dielectric deposit. The reactive gas is removed by the external pump and is getter
...
The target coverage changes very little with initial increase in reactive gas flow
because the bombarding ion flux keeps the eroded portion of the target clear of
dielectric deposit. The reactive gas is removed by the external pump and is getter
...
Page 217
Increasing bias voltage causes the deposition rate to deteriorate; at a relatively
high bias, the erosion rate from sputtering can exactly offset the deposition rate,
leaving the substrate uncoated. The atoms sputtered off the substrate by the ...
Increasing bias voltage causes the deposition rate to deteriorate; at a relatively
high bias, the erosion rate from sputtering can exactly offset the deposition rate,
leaving the substrate uncoated. The atoms sputtered off the substrate by the ...
Page 788
However, this will not explain the continuing increase in ejecta velocity after
saturation [25] or the continuing increase in the acoustic impulse signal (Fig. 3).
Both indicate that the energy deposited by the laser continues to increase as flux
...
However, this will not explain the continuing increase in ejecta velocity after
saturation [25] or the continuing increase in the acoustic impulse signal (Fig. 3).
Both indicate that the energy deposited by the laser continues to increase as flux
...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactive reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric structure substrate substrate temperature susceptor target techniques Technol thermal thickness thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, John L. Vossen |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin films |
| Export Citation | BiBTeX EndNote RefMan |