Thin Film Processes, Volume 2 |
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Page 192
The target coverage changes very little with initial increase in reactive gas flow
because the bombarding ion flux keeps the eroded portion of the target clear of
dielectric deposit . The reactive gas is removed by the external pump and is
getter ...
The target coverage changes very little with initial increase in reactive gas flow
because the bombarding ion flux keeps the eroded portion of the target clear of
dielectric deposit . The reactive gas is removed by the external pump and is
getter ...
Page 788
However , this will not explain the continuing increase in ejecta velocity after
saturation ( 25 ) or the continuing increase in the acoustic impulse ... Both
indicate that the energy deposited by the laser continues to increase as flux
increases .
However , this will not explain the continuing increase in ejecta velocity after
saturation ( 25 ) or the continuing increase in the acoustic impulse ... Both
indicate that the energy deposited by the laser continues to increase as flux
increases .
Page 810
Thermal gradients in the reactant medium near the surface are sometimes
desirable to increase the reaction rate , since they can ... With a chopped cw
beam , this effect manifests itself as a maximum in etching rate as a function of
increasing ...
Thermal gradients in the reactant medium near the surface are sometimes
desirable to increase the reaction rate , since they can ... With a chopped cw
beam , this effect manifests itself as a maximum in etching rate as a function of
increasing ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
20 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 20 Sep 2010 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |