Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 192
... increase in reactive gas flow because the bombarding ion flux keeps the eroded portion of the target clear of dielectric deposit . The reactive gas is removed by the external pump and is getter pumped by the sputtered metal flux . The ...
... increase in reactive gas flow because the bombarding ion flux keeps the eroded portion of the target clear of dielectric deposit . The reactive gas is removed by the external pump and is getter pumped by the sputtered metal flux . The ...
Page 788
... increase in ejecta velocity after saturation [ 25 ] or the continuing increase in the acoustic impulse signal ( Fig . 3 ) . Both indicate that the energy deposited by the laser continues to increase as flux increases . Nor can plume ...
... increase in ejecta velocity after saturation [ 25 ] or the continuing increase in the acoustic impulse signal ( Fig . 3 ) . Both indicate that the energy deposited by the laser continues to increase as flux increases . Nor can plume ...
Page 810
... increase in temperature , cw sources are preferable to pulsed sources , since higher rates can be achieved with a minimum of substrate heating because of the lower peak power density for a given number of photons with cw sources . For ...
... increase in temperature , cw sources are preferable to pulsed sources , since higher rates can be achieved with a minimum of substrate heating because of the lower peak power density for a given number of photons with cw sources . For ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength