Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 67
John L. Vossen, Werner Kern. DISCHARGE CHAMBER ACCEL . GRID SAMPLE ION BEAM VB M NEUT . VACC SAMPLE Fig . 56. The variation in dc potential ( lower curves ) as a function of position ( upper curves ) for a Kaufman - type ion source . of ...
John L. Vossen, Werner Kern. DISCHARGE CHAMBER ACCEL . GRID SAMPLE ION BEAM VB M NEUT . VACC SAMPLE Fig . 56. The variation in dc potential ( lower curves ) as a function of position ( upper curves ) for a Kaufman - type ion source . of ...
Page 188
John L. Vossen, Werner Kern. C. Ion Beam Sputter Sources The multiaperture Kaufman ion source is , by far , the most popular type of source for ion beam sputtering . Detailed descriptions of the Kaufman source , together with other types ...
John L. Vossen, Werner Kern. C. Ion Beam Sputter Sources The multiaperture Kaufman ion source is , by far , the most popular type of source for ion beam sputtering . Detailed descriptions of the Kaufman source , together with other types ...
Page 755
... beam will be deflected several degrees from its proper direction , and direct accelerator impingement will be encountered at a lower - than - normal beam current . The problem of misaligned grids is ... beam ions V - 2 . ION BEAM ETCHING 755.
... beam will be deflected several degrees from its proper direction , and direct accelerator impingement will be encountered at a lower - than - normal beam current . The problem of misaligned grids is ... beam ions V - 2 . ION BEAM ETCHING 755.
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength