Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 182
... bombardment , tend to have smooth surfaces , high densities , and other properties close to the bulk values . Thus , these films are usually the desired type of coatings for applications . Both the ion energy and the ion / atom arrival ...
... bombardment , tend to have smooth surfaces , high densities , and other properties close to the bulk values . Thus , these films are usually the desired type of coatings for applications . Both the ion energy and the ion / atom arrival ...
Page 213
... bombarded by energetic particles , normally ions . This is the basis of ion plating . Introduced by Mattox in 1963 [ 5 ] , ion plating is defined as a coating process in which the substrate and growing film are continually bombarded ...
... bombarded by energetic particles , normally ions . This is the basis of ion plating . Introduced by Mattox in 1963 [ 5 ] , ion plating is defined as a coating process in which the substrate and growing film are continually bombarded ...
Page 252
... ion - bombardment sputter cleans the surface of the substrate , the substrate is heated , the surface of the substrate is modified by ion - induced damage ( as previously described ) , and surface intermixing occurs between the bombarding ...
... ion - bombardment sputter cleans the surface of the substrate , the substrate is heated , the surface of the substrate is modified by ion - induced damage ( as previously described ) , and surface intermixing occurs between the bombarding ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength