Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 241
... ion energy : The high particle velocity , and hence energy , resulted from gas dynamic acceleration of the vapor . This argument was based on an esti- mated particle density in the plasma near the cathode of 1018 to 1020 cm - 3 and an ...
... ion energy : The high particle velocity , and hence energy , resulted from gas dynamic acceleration of the vapor . This argument was based on an esti- mated particle density in the plasma near the cathode of 1018 to 1020 cm - 3 and an ...
Page 761
... ion energy on sputter yield ( from Ref . 15 ) is indicated in Fig . 2. The etch rate is proportional to sputter yield , so that the variation of etch rate for a constant ion current density would have a similar shape . In Fig . 2b , the ...
... ion energy on sputter yield ( from Ref . 15 ) is indicated in Fig . 2. The etch rate is proportional to sputter yield , so that the variation of etch rate for a constant ion current density would have a similar shape . In Fig . 2b , the ...
Page 762
... ion with an energy of 100 eV has a temperature equivalent of 1,160,000 K. At the same time , the target is typically at a bulk temperature of less than 400 K. The ion energy is thus sufficient to activate any chemical process , but this ...
... ion with an energy of 100 eV has a temperature equivalent of 1,160,000 K. At the same time , the target is typically at a bulk temperature of less than 400 K. The ion energy is thus sufficient to activate any chemical process , but this ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength