Thin Film Processes, Volume 2 |
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Page 18
The secondary electrons are accelerated across the sheath into the plasma ; in
doing so , they gain enough energy to cause the ionization of a number of neutral
gas atoms . In the case of the applied electric field excitation of the plasma ...
The secondary electrons are accelerated across the sheath into the plasma ; in
doing so , they gain enough energy to cause the ionization of a number of neutral
gas atoms . In the case of the applied electric field excitation of the plasma ...
Page 218
2 ) , increase the degree of ionization . Despite these enhancements , the
majority of the depositing species in evaporative and sputter ion plating are
neutral . The low arrival energy of these neutrals at the substrate leaves them
relatively ...
2 ) , increase the degree of ionization . Despite these enhancements , the
majority of the depositing species in evaporative and sputter ion plating are
neutral . The low arrival energy of these neutrals at the substrate leaves them
relatively ...
Page 682
If the electrons have gained sufficient kinetic energy , they will collide inelastically
with the gas molecules , causing ionization or dissociation . In such a collision all
but a small fraction ( ~ m / M ) of the initial kinetic energy is converted to ...
If the electrons have gained sufficient kinetic energy , they will collide inelastically
with the gas molecules , causing ionization or dissociation . In such a collision all
but a small fraction ( ~ m / M ) of the initial kinetic energy is converted to ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls