Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 18
... ionization . In each case , the energetic electrons not only cause direct ionization and excitation of the background gas , but also result in a general heating of the electron population . Energetic electrons from the high - energy ...
... ionization . In each case , the energetic electrons not only cause direct ionization and excitation of the background gas , but also result in a general heating of the electron population . Energetic electrons from the high - energy ...
Page 20
... ionizing collisions may occur . The ions are accelerated to the cathode and may strike it at high energy , causing the emission of secondary electrons . These additional electrons can cause further ionization , and very rapidly a ...
... ionizing collisions may occur . The ions are accelerated to the cathode and may strike it at high energy , causing the emission of secondary electrons . These additional electrons can cause further ionization , and very rapidly a ...
Page 682
... ionization or dissociation . In such a collision all but a small fraction ( ~ m / M ) of the initial kinetic energy is converted to potential energy of the struck particle . Ionization results in the release of another electron ...
... ionization or dissociation . In such a collision all but a small fraction ( ~ m / M ) of the initial kinetic energy is converted to potential energy of the struck particle . Ionization results in the release of another electron ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength