Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
From inside the book
Results 1-3 of 64
Page 117
... kinetics of the compound formation by this process . The presence of a " plasma " in the ARE process influences the reaction ... kinetic constraints must be satisfied , which also applies to the deposition of refractory compound films by ...
... kinetics of the compound formation by this process . The presence of a " plasma " in the ARE process influences the reaction ... kinetic constraints must be satisfied , which also applies to the deposition of refractory compound films by ...
Page 290
... Kinetic rate parameters are essential in CVD modeling to predict the rate of formation of gas - phase species leading to either film growth or impurity incorporation . Since only a few kinetic parameters are known for well - studied ...
... Kinetic rate parameters are essential in CVD modeling to predict the rate of formation of gas - phase species leading to either film growth or impurity incorporation . Since only a few kinetic parameters are known for well - studied ...
Page 682
... kinetic energy , they will collide inelastically with the gas molecules , causing ionization or dissociation . In such a collision all but a small fraction ( ~ m / M ) of the initial kinetic energy is converted to potential energy of ...
... kinetic energy , they will collide inelastically with the gas molecules , causing ionization or dissociation . In such a collision all but a small fraction ( ~ m / M ) of the initial kinetic energy is converted to potential energy of ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
49 other sections not shown
Other editions - View all
Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength