Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 784
... Laser - based pro- cesses possess some general characteristics that provide advantages over these other etching techniques for certain applications . Unlike ion - based processes , laser processes seldom produce atomic displacement ...
... Laser - based pro- cesses possess some general characteristics that provide advantages over these other etching techniques for certain applications . Unlike ion - based processes , laser processes seldom produce atomic displacement ...
Page 800
... laser - etching process is determined by the wavelength and coherence of the laser and the optical imaging elements employed , the most fundamental limiting factor is the wavelength . The ... Lasers Laser Wavelengths 800 CAROL I. H. ASHBY.
... laser - etching process is determined by the wavelength and coherence of the laser and the optical imaging elements employed , the most fundamental limiting factor is the wavelength . The ... Lasers Laser Wavelengths 800 CAROL I. H. ASHBY.
Page 845
... laser etching processes are in wide- spread use , and others have been recently incorporated on production lines . Laser trimming and laser link cutting have become well established technologies [ 289 , 290 ] . Laser trimming of thick ...
... laser etching processes are in wide- spread use , and others have been recently incorporated on production lines . Laser trimming and laser link cutting have become well established technologies [ 289 , 290 ] . Laser trimming of thick ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength