Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 150
... layer by atomic layer as the incoming flux is condensed . When one layer is complete , the surface is atomically smooth and flat , and as the next layer is initiated , the surface is dotted with newly arrived atoms forming a some- what ...
... layer by atomic layer as the incoming flux is condensed . When one layer is complete , the surface is atomically smooth and flat , and as the next layer is initiated , the surface is dotted with newly arrived atoms forming a some- what ...
Page 155
... layer that is first deposited on top of the Si substrate . With an appropriate growth sequence , the buffer layer is used to suppress the two problems . The Si wafer is prepared using procedures outlined previously . To prevent ...
... layer that is first deposited on top of the Si substrate . With an appropriate growth sequence , the buffer layer is used to suppress the two problems . The Si wafer is prepared using procedures outlined previously . To prevent ...
Page 294
... layer- by - layer growth , and ( 3 ) layer - plus - island growth . In three - dimensional island growth , small clusters are nucleated directly on the substrate surface and grow into islands of the film material ; they eventually ...
... layer- by - layer growth , and ( 3 ) layer - plus - island growth . In three - dimensional island growth , small clusters are nucleated directly on the substrate surface and grow into islands of the film material ; they eventually ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength