Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 30
... lead to better topographical control and step coverage over complicated surfaces features ( Fig . 14 ) . An ... leads to what is called a " hollow cathode " discharge . In this case , ions from the plasma ( a ) MATCHING NETWORK ( b ) ( c ) ...
... lead to better topographical control and step coverage over complicated surfaces features ( Fig . 14 ) . An ... leads to what is called a " hollow cathode " discharge . In this case , ions from the plasma ( a ) MATCHING NETWORK ( b ) ( c ) ...
Page 650
... lead to a higher deposition yield by increasing No. For example , dimethyl cadmium adsorbed on SiO2 exhibits Langmuir - type adsorption at > 320 K , resulting in saturation of the surface at one monolayer ; however , as the temperature ...
... lead to a higher deposition yield by increasing No. For example , dimethyl cadmium adsorbed on SiO2 exhibits Langmuir - type adsorption at > 320 K , resulting in saturation of the surface at one monolayer ; however , as the temperature ...
Page 688
... lead to enhanced etching . In 1978 , Mauer et al . [ 27 ] proposed a mechanism they called chemically enhanced ... lead to oxide growth on clean metal surfaces can also lead to halide formation . Etching occurs because satu- rated ...
... lead to enhanced etching . In 1978 , Mauer et al . [ 27 ] proposed a mechanism they called chemically enhanced ... lead to oxide growth on clean metal surfaces can also lead to halide formation . Etching occurs because satu- rated ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength