Thin Film Processes, Volume 2 |
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Page 30
... deposited on samples located on this electrode . In addition , the ion
bombardment may lead to a level of “ re - sputtering ” and enhanced surface
mobility that may lead to better topographical control and step coverage over
complicated ...
... deposited on samples located on this electrode . In addition , the ion
bombardment may lead to a level of “ re - sputtering ” and enhanced surface
mobility that may lead to better topographical control and step coverage over
complicated ...
Page 650
In a number of cases , it has been found that multilayer adsorbate films can lead
to a higher deposition yield by increasing No . ... Multilayer adsorption at low
temperatures leads to vastly increased deposition yields for W deposition from
WFo ...
In a number of cases , it has been found that multilayer adsorbate films can lead
to a higher deposition yield by increasing No . ... Multilayer adsorption at low
temperatures leads to vastly increased deposition yields for W deposition from
WFo ...
Page 688
Three mechanisms have been proposed to account for ion - induced chemical
reactions that lead to enhanced etching . In 1978 , Mauer et al . [ 27 ] proposed a
mechanism they called chemically enhanced physical etching . The enhanced ...
Three mechanisms have been proposed to account for ion - induced chemical
reactions that lead to enhanced etching . In 1978 , Mauer et al . [ 27 ] proposed a
mechanism they called chemically enhanced physical etching . The enhanced ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls