Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 64
... limited and tends to follow a V3 / 2 relation , consistent with Child's law . At sufficiently high voltages ( III ) , the discharge current satu- rates and becomes dependent only on the amount of heating current , and hence the maximum ...
... limited and tends to follow a V3 / 2 relation , consistent with Child's law . At sufficiently high voltages ( III ) , the discharge current satu- rates and becomes dependent only on the amount of heating current , and hence the maximum ...
Page 371
... Limited substrate areas and poor control over the growth of very thin layers has limited the extension of LPE to the new , more aggressive device structures . Vapor phase epitaxy ( VPE ) of com- pound semiconductors utilizes the ...
... Limited substrate areas and poor control over the growth of very thin layers has limited the extension of LPE to the new , more aggressive device structures . Vapor phase epitaxy ( VPE ) of com- pound semiconductors utilizes the ...
Page 652
... Limited Processes Transport limited processes exhibit some properties peculiar to the localized nature of the surface reaction . Because reagent molecules arrive isotropically from the gas or liquid reservoir , and reaction at the ...
... Limited Processes Transport limited processes exhibit some properties peculiar to the localized nature of the surface reaction . Because reagent molecules arrive isotropically from the gas or liquid reservoir , and reaction at the ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength