Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 527
... lower energy barriers to physical and chemical reactions than the parent species , and consequently can react at lower temperatures . In PECVD , these reactive species are utilized to form thin films at tempera- tures lower than those ...
... lower energy barriers to physical and chemical reactions than the parent species , and consequently can react at lower temperatures . In PECVD , these reactive species are utilized to form thin films at tempera- tures lower than those ...
Page 533
... lower electrode , with the gas flow directed radially outward . A magnetic drive assembly permits rotation of the radiation - heated lower electrode to randomize the substrate position . Improvements to this design have been made ...
... lower electrode , with the gas flow directed radially outward . A magnetic drive assembly permits rotation of the radiation - heated lower electrode to randomize the substrate position . Improvements to this design have been made ...
Page 810
... lower than with a comparable pulsed source because of thermal diffusion . For photochemical processes , which are linearly dependent on the total number of photons and do not require a significant local increase in temperature , cw ...
... lower than with a comparable pulsed source because of thermal diffusion . For photochemical processes , which are linearly dependent on the total number of photons and do not require a significant local increase in temperature , cw ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength